Growth Optimization of GaAsSb Lattice Matched to InP by Gas-Source Molecular- Beam-Epitaxy

摘要

[[abstract]]Bulk GaAsSb samples were grown lattice matched to InP substrates at different temperatures using gas-source molecular-beam epitaxy in order to optimize the crystal quality. Growth temperatures from 15 °C above the InP surface oxide desorption temperature to 145 °C below it have been investigated. Undesirable properties such as Sb composition variation and natural composition superlattices in the growth direction have occurred at high growth temperature possibly due to phase separation. High quality, single phase GaAsSb lattice matched to InP has been grown at 135 °C below the desorption temperature as evidenced by narrow linewidths and clear Pendellösung fringes displayed in high-resolution x-ray diffraction spectra.