Growth and properties of GaAsSb/InP and GaAsSb/InAlAs superlattices on InP

摘要

GaAsSb/InP superlattices (SLs) grown on InP using metalorganic vapor phase epitaxy are investigated by low-temperature cathodoluminescence (CL) spectroscopy, transmission electron microscopy, and X-ray diffraction. The low-temperature CL spectra show the spatially indirect type Ⅱ transition across the GaAsSb/InP interface. From type Ⅱ luminescence, the conduction and valence band offsets between GaAsSb and InP are derived. The optical properties of GaAsSb/InAlAs SLs, which have type I band alignment, are compared with those of GaAsSb/InP SLs.