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MOVPE growth of lattice matched InAs/GaAsSb superlattice on InAs substrate for mid-infrared sensing devices

机译：用于中红外传感设备的InAs衬底上晶格匹配的InAs / GaAsSb超晶格的MOVPE生长

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摘要

We investigated the gas flow sequence to realize short period and lattice matched InAs/GaAsSb superlattice on InAs substrate by MOVPE. Arsenic composition of GaAsSb for lattice matching was adjusted by adding AsH

机译：我们研究了通过MOVPE在InAs衬底上实现短周期和晶格匹配的InAs / GaAsSb超晶格的气流顺序。通过添加AsH来调节用于晶格匹配的GaAsSb的砷成分

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来源
《Microoptics Conference》|2017年|300-301|共2页
会议地点 Tokyo(JP)
作者
Kakeru Takahashi; Yuki Fujiwara; Yuya Yamagata; Keita Yoshimoto; Yuki Inoue; Ryosuke Wakaki; Koji Maeda; Masakazu Arai;
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作者单位

University of Miyazaki 1-1 Gakuen Kibanadai-nishi Miyazaki-shi 889-2192 Japan;

Univer;

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关键词
Superlattices; Lattices; Substrates; Arsenic; Epitaxial growth; Epitaxial layers; Sensors;

机译：超晶格格子基材；砷;外延生长；外延层；感测器;

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专利

1. GaAsSb layer thickness dependence of arsenic incorporation on InAs/GaAsSb superlattice on InAs substrate grown by metalorganic vapor phase epitaxy for mid-infrared device [J] . Arai Masakazu, Takahashi Kakeru, Yamagata Yuya, Japanese journal of applied physics . 2018,第8s2期

机译：金属有机气相外延法生长InAs衬底上砷掺入GaAsSb层厚度对InAs / GaAsSb超晶格的影响
2. High performance InAs/GaAsSb superlattice long wavelength infrared photo-detectors grown on InAs substrates [J] . Xu Zhicheng, Chen Jianxin, Wang Fangfang, Semiconductor science and technology . 2017,第5期

机译：在InAs衬底上生长的高性能InAs / GaAsSb超晶格长波长红外光电探测器
3. Low‐temperature phase diagram of the Ga‐As‐Sb system and liquid‐phase‐epitaxial growth of lattice‐matched GaAsSb on (100) InAs substrates [J] . Journal of Applied Physics . 1986,第8期

机译：Ga-As-Sb系统的低温相图和（100）InAs衬底上晶格匹配的GaAsSb的液相外延生长
4. MOVPE Growth of Lattice Matched InAs/GaAsSb Superlattice on InAs Substrate for Mid-Infrared Sensing Devices [C] . Kakeru Takahashi, Yuki Fujiwara, Yuya Yamagata, Microoptics Conference . 2017

机译：用于中红外传感装置INAS基板的格子匹配in in in in / gaassb超廓图的MOVPE生长
5. Dark Current Suppression, Optical Performance Improvement and High Frequency Operation of InAs/GaSb and InAs/InAsSb Type-II Superlattices-Based Infrared Devices [D] . Chevallier, Romain. 2019

机译：InAs / GaSb和基于InAs / InAsSb II型超晶格的红外器件的暗电流抑制，光学性能改进和高频操作
6. Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices [O] . Abbas Haddadi, Arash Dehzangi, Romain Chevallier, -1

机译：基于InAs / InAs1-xSbx / AlAs1-xSbx II型超晶格的偏置可选nBn双波段长/非常长波长红外光电探测器
7. High-Speed Mid-Infrared Interband Cascade Photodetector Based on InAs/GaAsSb Type-II Superlattice [O] . Yaojiang Chen, Xuliang Chai, Zhiyang Xie, 2020

机译：基于INAS / GAASSB Type-II超晶格的高速中红外线间级联光电探测器

MOVPE growth of lattice matched InAs/GaAsSb superlattice on InAs substrate for mid-infrared sensing devices

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