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Phase Diagram for LPE Growth of GaInAsP Layers Lattice Matched to InP Substrates

机译：与Inp衬底匹配的GaInasp层的LpE生长的相图

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作者
Hsieh, J. J.;
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年度 1980
页码 p.1-6
总页数 6
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Epitaxial growth; Phase diagrams; Gallium arsenides; Indium phosphides; Substrates; Layers; Crystal structure; Reprints;

机译：外延生长;相图;砷化镓;磷化铟;衬底;层;晶体结构;重印;

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专利

1. Determination of In‐Ga‐As phase diagram at 650 °C and LPE growth of lattice‐matched In0.53Ga0.47As on InP [J] . Journal of Applied Physics . 1979,第7期

机译：在InP上确定650°C下In-Ga-As相图和晶格匹配的In0.53Ga0.47As的LPE生长
2. Effect of holmium addition during LPE growth on the properties of InP and GaInAsP layers [J] . O.Prochazkova, J.Zavakil, K.Zdansky Czechoslovak Journal of Physics . 1997,第7期

机译：LPE生长过程中添加addition对InP和GaInAsP层性能的影响
3. Fabrication and application of InAs quantum dots by droplet-hetero epitaxy on GaInAsP and AlInAs lattice-matched with InP substrates [J] . Woo-Sik Lee, Ryo Oga, Yoshihiro Yoshida, 電子情報通信学会技術研究報告. 電子部品·材料. Component Parts and Materials . 2003,第49期

机译：GaInAsP和AlInAs晶格匹配InP衬底上的液滴异质外延制备InAs量子点及其应用
4. Growth and Characteristics of High Optical Quality Lattice Matched GaInAsP Layers and GaInAsP/GaInAs Quantum Wells on InP by MBE using Solid Phosphorus and Arsenic Valved Cracking Cells [C] . J. N. Baillargeon, A. Y. Cho, F. A. Thiel, International symposium on compound semiconductors . 1995

机译：使用固体磷和砷阀裂化池的MBE在InP上生长高光学质量的晶格匹配的GaInAsP层和GaInAsP / GaInAs量子阱及其特性
5. GaInAsP/InP Organo-Metallic Vapor Phase Epitaxy (OMVPE) for Quantum Box Lasers [D] . 宮本恭幸. 1988

机译：用于量子盒激光器的GaInAsP / InP有机金属气相外延（OMVPE）
6. Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP [O] . Xin Yi, Shiyu Xie, Baolai Liang, -1

机译：证明与InP匹配的AlAs0.56Sb0.44晶格中的大电离系数比
7. Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth [O] . Gupta, Priti, Rahman, A. A., Subramanian, Shruti, 2015

机译：层状过渡金属二硫化物：有希望的近晶格匹配用于GaN生长的衬底
8. Conditions for Lattice Matching in the LPE Growth of GaInAsP Layers on InP Substrates. [R] . Hsieh, J. J., Rossi, J. A., Finn, M. C. 1976

机译：Inp衬底上GaInasp层LpE生长中晶格匹配的条件。

Phase Diagram for LPE Growth of GaInAsP Layers Lattice Matched to InP Substrates

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