Transconductance and Transfer Characteristics of 8 MeV Electron Irradiated Dual N-Channel MOSFETs

摘要

The electrical characteristics of dual N-channel enhancement metal-oxide semiconductor field-effect transistors (MOSFETs) were altered by irradiating with 8 MeV electron beam for different doses ranging from 200 Gy to 1 kGy at ambient air. The irradiation experiments were conducted with gate bias (VGS = -2, 0, +1.5 and +2 V). Significant increase in transconductance (gm) was observed after irradiation. The gm was found to increase drastically for the dose of 1 kGy with positive bias (1.5 and 2 V). The transfer characteristics at VDS=12 V revealed that the drain current (ID) increases with the increase of dose and also increases with the increase of gate bias voltage during irradiation. The results of these investigations are presented and discussed.