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Deep levels in p(+)-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

机译:通过对Mg或Mg / P注入的InP进行快速热退火而制造的p(+)-n结中的深能级

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摘要

In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InP p(+)-n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized using deep level transient spectroscopy (DLTS) and capacitance-voltage transient technique (CVTT). Seven majority deep levels located in the upper half of the band gap were detected in the junctions by using DLTS measurements, four of which (at 0.6, 0.45, 0.425, and 0.2 eV below the conduction band) result from RTA, while the origin of the other three levels (at 0.46, 0.25, and 0.27 eV below the conduction band) can be ascribed to implantation damage. An RTA-induced origin was assigned to a minority deep level at 1.33 eV above the valence band. From CVTT measurements, several characteristics of each trap were derived. Tentative assignments have been proposed for the physical nature of all deep levels.
机译:在这项工作中,我们调查离子注入和快速热退火(RTA)InP p(+)-n结中存在的深水平。将样品植入镁或与镁和磷共植入。这些水平使用深层瞬变光谱法(DLTS)和电容-电压瞬变技术(CVTT)进行表征。通过使用DLTS测量,在结中检测到位于带隙上半部的七个多数深层,其中四个(在导带以下0.6、0.45、0.425和0.2 eV)是RTA引起的,而其他三个水平(在导带以下0.46、0.25和0.27 eV处)可归因于注入损伤。 RTA诱导的起源被指定为价带上方1.33 eV处的少数深度水平。从CVTT测量中,可以得出每个陷阱的几个特征。已针对所有深层的物理性质提出了临时任务。

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