Capless Rapid Thermal Annealing of Si+-Implanted InP

摘要

An enhanced-overpressure capless annealing technique suitable for annealing ion-implanted InP at temperatures of 900 C is described. The technique utilizes a Sn-coated InP wafer and is based on the same principle as the In-Sn-P liquid-solution method for eliminating InP surface degradation prior to epitaxial growth. InP samples implanted with 140 keV, 10 to the 14th power/sq. cm Si+ and annealed at 900 C for 10 s exhibited improved electrical characteristics over samples annealed at 750 C for 5 min using conventional encapsulation techniques.