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Long-Wavelength Stacked Si(sub 1-x)/Si Heterojunction Internal Photoemission Infrared Detectors

机译：长波长堆叠si（sub 1-x）/ si异质结内部光电发射红外探测器

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摘要

Utilizing the low temperature silicon molecular beam epitaxy (MBE) growth of degenerately doped SiGe layers on Si, long wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Se layers have been fabricated and demonstrated.

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作者
Park, J. S.; Lin, T. L.; Jones, E. W.; Castillo, H. M. Del; George, T.; Gunapala, S. D.;
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年度 1993
页码 1-18
总页数 18
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
DOPED CRYSTALS; FABRICATION; HETEROJUNCTIONS; INFRARED DETECTORS; LOW TEMPERATURE; MOLECULAR BEAM EPITAXY; PHOTOELECTRIC EMISSION; QUANTUM EFFICIENCY; SILICON; infrared detectors long wavelength enhanced quantum efficiencies;

机译：掺杂的晶体;制造;异质结;红外探测器;低温;分子束EpITaXY;光电发射;量子效率;硅;红外探测器长波长增强量子效率;

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专利

1. SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy [J] . Lin T.-L., Ksendzov A. IEEE Transactions on Electron Devices . 1991,第5期

机译：分子束外延制造SiGe / Si异质结内部光发射长波红外探测器
2. Long-wavelength Ge/sub x/Si/sub 1-x//Si heterojunction infrared detectors and 400*400-element imager arrays [J] . Tsaur B.-Y., Chen C.K. IEEE Electron Device Letters . 1991,第6期

机译：长波长Ge / sub x / Si / sub 1-x // Si异质结红外探测器和400 * 400元素成像仪阵列
3. Improvement on the performance of P+-GexSi1-x/p-Si heterojunction internal photoemission infrared detectors at 77 K [J] . Wang RZ., Tsien PS., Luo GL., Infrared physics and technology . 1998,第5期

机译：改进P + -GexSi1-x / p-Si异质结内部光电发射红外探测器在77 K时的性能
4. Long-wavelength stacked Si1-x Gex/Si heterojunction-internal-photoemission infrared detectors [C] . Jin S. Park, True L. Lin, E.W. Jones, Infrared technology conference . 1993

机译：长波长堆叠Si1-X GEX / SI异质结 - 内部光学激发红外探测器
5. Adaptive FEM -based numerical simulation of two-dimensional Hg(1-x)Cd(x)Te heterojunction photovoltaic detectors [D] . Dai, Hung-ming 1999

机译：基于自适应有限元的二维Hg（1-x）Cd（x）Te异质结光伏探测器数值模拟
6. Ultrahigh Ultrafast and Self‐Powered Visible‐Near‐Infrared Optical Position‐Sensitive Detector Based on a CVD‐Prepared Vertically Standing Few‐Layer MoS2/Si Heterojunction [O] . Ridong Cong, Shuang Qiao, Jihong Liu, 2018

机译：基于CVD制备的垂直站立的少层MoS2 / Si异质结的超高超快和自供电的可见光-近红外光学位置敏感检测器
7. Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long wavelength infrared detectors [O] . Lin, T. L., Maserjian, Joseph, Ksendzov, A., 1990

机译：新型Si（1-x）Ge（x）/ Si异质结内部光发射长波长红外探测器
8. Long-Wavelength Stacked SiGe/Si Heterojunction Internal Photoemission Infrared Detectors Using Multiple SiGe/Si Layers [R] . Park, J. S., Lin, T. L., Jones, E. W., 1994

机译：使用多个siGe / si层的长波长堆叠siGe / si异质结内部光电发射红外探测器

Long-Wavelength Stacked Si(sub 1-x)/Si Heterojunction Internal Photoemission Infrared Detectors

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