Improvement on the performance of P+-GexSi1-x/p-Si heterojunction internal photoemission infrared detectors at 77 K

摘要

By using a stacked structure, adding an SiO2 dielectric cavity and an Al mirror, and evaporating a SiO anti-reflecting layer on the back of the substrate, the peak detectivity D-(5.5,D-1000,D-1)* of an unbiased P+-GexSi1-x/p-Si heterojunction internal photoemission (HIP) infrared detector at 77 K has been improved to 1.1 X 10(10) cm Hz(1/2)/W, with a peak quantum efficiency of similar to 2.8% and a photoresponse range of 2-8 mu m. Its D-p* is of the same order of magnitude as that of the PtSi infrared detectors being used in practice. In addition, an improved electrode structure is used in order to improve the performance and reliability of the device. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 6]