Semiconductor infrared detector device, esp. tunable internal photoemission sensor

摘要

The device, e.g. a TIPS, has a Schottky barrier and is formed from a doped semiconductor. The Schottky barrier lies inside the detector material or on the detector surface. The doping can be determined to correspondingly determine edge characteristics of detected radiation. The device may form part of an array or in the form of a Camel diode. The doping and the thickness of the surface layer of an array may be position dependent so that position dependent minimal energy of detected photons may be produced.