Dopant-Tunable Ultrathin Transparent Conductive Oxides for Efficient Energy Conversion Devices

摘要

Ultrathin film-based transparent conductive oxides(TCOs)with a broad work function(WF)tunability are highly demanded for e cient energy conversion devices.However,reducing the film thickness below 50 nm is limited due to rapidly increasing resistance;furthermore,introducing dopants into TCOs such as indium tin oxide(ITO)to reduce the resistance decreases the transparency due to a trade-o between the two quantities.Herein,we demonstrate dopant-tunable ultrathin(≤50 nm)TCOs fabricated via electric field-driven metal implantation(m-TCOs;m=Ni,Ag,and Cu)without com-promising their innate electrical and optical properties.The m-TCOs exhibit a broad WF variation(0.97 eV),high transmittance in the UV to visible range(89–93%at 365 nm),and low sheet resistance(30–60Ωcm-2).Experimental and theoretical analyses show that interstitial metal atoms mainly a ect the change in the WF without substantial losses in optical transparency.The m-ITOs are employed as anode or cathode electrodes for organic light-emitting diodes(LEDs),inorganic UV LEDs,and organic photovoltaics for their universal use,leading to outstanding performances,even without hole injection layer for OLED through the WF-tailored Ni-ITO.These results verify the proposed m-TCOs enable e ective carrier transport and light extraction beyond the limits of traditional TCOs.