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GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors

机译：Gaas同质结界面功函数内部光电发射（HIWIp）远红外探测器

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A. G. U. Perera A; W. Z. Shen A; H. C. Liu B; M. Buchanan B; W. J. Schaff C;
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年度 2015
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1. Photoconductivity in homojunction internal photoemission far-infrared detectors [J] . Shen WZ., Perera AGU. Infrared physics and technology . 1998 ,第5期

机译：同质结内部光发射远红外探测器中的光电导率
2. Effect of emitter thickness on the spectral shape of heterojunction interfacial workfunction internal photoemission detectors [J] . S. G. Matsik, R. C. Jayasinghe, A. B. Weerasekara, Journal of Applied Physics . 2009 ,第1期

机译：发射极厚度对异质结界面功函数内部光发射探测器光谱形状的影响
3. Effect of Doped Substrate on GaAs-AlGaAs Interfacial Workfunction IR Detector Response Through Cavity Effect [J] . Steven G. Matsik, Mohamed B. M. Rinzan, Dmitriy G. Esaev, IEEE Transactions on Electron Devices . 2005 ,第3期

机译：掺杂衬底对空穴效应对GaAs-AlGaAs界面功函数红外探测器响应的影响
4. Novel homojunction interfacial workfunction internal photoemission (HIWIP) tunable far-infrared detectors for astronomy [C] . Unil A. Perera, Georgia State Univ., Atlanta, Infrared Detectors and Instrumentation for Astronomy . 1995

机译：新型的用于天文学的同质结界面功函数内部光发射（HIWIP）可调谐远红外探测器
5. Far-infrared studies of electron-electron interactions in Si-doped GaAs/AlGaAs multiple quantum wells. [D] . Jiang, Zhenxin. 1997

机译：掺Si的GaAs / AlGaAs多量子阱中电子与电子相互作用的远红外研究。
6. Atom-to-atom interactions for atomic layer deposition of trimethylaluminum on Ga-rich GaAs(001)-4 × 6 and As-rich GaAs(001)-2 × 4 surfaces: a synchrotron radiation photoemission study [O] . Tun-Wen Pi, Hsiao-Yu Lin, Ya-Ting Liu, 2013

机译：富GaAs（001）-4×6和As富GaAs（001）-2×4表面上三甲基铝原子层沉积的原子-原子相互作用：同步辐射辐射光发射研究
7. GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors [O] . Perera A. G., Shen W. Z., Liu Hui, 2000

机译：GaAs同质结界面功函数内部光发射（HIWIP）远红外探测器
8. Correlation of polycrystalline Cu(In,Ga)Se(sub 2) device efficiency with homojunction depth and interfacial structure: X-ray photoemission and positron annihilation spectroscopic characterization [R] . Nelson, A. J., Sobol, P. E., Gabor, A. M., 1994

机译：多晶Cu（In，Ga）se（sub 2）器件效率与同质结深度和界面结构的相关性：X射线光电发射和正电子湮没光谱表征

GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors

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