Long-Wavelength Stacked SiGe/Si Heterojunction Internal Photoemission Infrared Detectors Using Multiple SiGe/Si Layers

摘要

Utilizing low temperature silicon molecular beam epitaxy (MBE) growth, long-wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. Using an elemental boron source, high doping concentrations (approximately equal to 4 x 10(sup 20) cm(sup -3)) has been achieved and high crystalline quality multiple Si(sub 0.7)Ge(sub 0.3)/Si layers have been obtained. The detector structure consists of several periods of degenerately boron doped (approximately equal to 4 x 10(sup 20) cm(sup -3)) thin (less than or equal to 50 u Si(sub 0.7)Ge(sub 0.3) layers and undoped thick (approximately equal to 300u Si layers. The multiple p(sup ) - Si(sub 0.7)Ge(sub 0.3)/undoped-Si layers show strong infrared absorption in the long-wavelength regime mainly through free carrier absorption. The stacked Si(sub 0.7)Ge(sub 0.3)/Si HIP detectors with p = 4 x 10(sup 20) cm(sup -3) exhibit strong photoresponse at wavelengths ranging from 2 to 20 (micro)m with quantum efficiencies of about 4 and 1.5 at 10 and 15 (micro)m wavelengths, respectively. The detectors show near ideal thermionic-emission limited dark current characteristics.