High Peak-to-Valley Current Ratio In(0.22)Ga(0.78)As/AlAs RTDs on GaAs UsingRelaxed In(x)Ga(1-x)As Buffers

摘要

The authors have grown In(0.22)Ga(0.78)As/AlAs resonant tunnelling diodes (RTDs)on relaxed In(x)Ga(1-x)As buffers on GaAs substrates, which show the largest peak-to-valley current ratio (PVCR) 13:1, ever reported for GaAs-based RTDs. X-ray diffraction and photoluminescence (PL) studies confirm the composition and relaxation of the buffers. The intrinsic device performance is excellent despite the presense of some dislocations in the active layers. However, it appears that the relaxed buffers do add series resistance to the intrinsic device.