High Sb Concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs Core-Shell-Shell Nanowires

摘要

Compositions comprising Group V/III nanowires, and methods of making such nanowires are described. Some compositions comprise one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs(1-y)Sby, where y=about 0.03-0.07 and the first shell is formed from GaAs(1-x)SbxN, where x=0.27-0.34. The nanowires have an average emission maximum of 1.4-1.7 μm. Some nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell is formed from a Group V/III material such as Ga1-mAlmAs, where m=0-0.2. Some nanowires have the structure GaAs(0.93-0.97)Sb(0.03-0.07)/GaAs(0.66-0.73)Sb(0.27-0.34)N/Ga(0.8-1)Al(0-0.2)As.