High peak-to-valley current ratio AlGaAs/AlAs/GaAs double barrier resonant tunnelling diodes

摘要

A double barrier resonant tunnelling diode with the highest room temperature peak-to-valley current ratio using Al/sub x/Ga/sub 1-x/As/GaAs quantum wells is reported. Room temperature peak-to-valley ratios of 6.3 were obtained using an Al/sub 0.2/Ga/sub 0.8/As 'chair' barrier. Peak current density for these diodes was typically 30 kA/cm/sup 2/.