GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

摘要

As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10⁻⁹ m²/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.