The Metal Oxide Semiconductor Analog Shift Register as an Image Sensor

摘要

The MOS Analog Shift Register (ASR) has been investigated because of the possible advantages that it offers over present image sensors. The primary advantage is the built-in self-scan feature of the ASR image sensor which requires no external shift register. A second possible advantage is that conventional MOS processing is used which should enable image sensors to be made at less cost. A third possible advantage is that the MOS ASR image sensor can operate at lower light levels than conventional bipolar image sensors. Thus, the MOS ASR is very attractive as an image sensor. The main attention in this study has been on the building and the modeling of single column MOS ASR image sensors. Through this work a very accurate model of the MOS ASR has been formulated, from which it is possible to predict the performance of all MOS ASR's. (Author)