METHOD FOR MANUFACTURING A COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR IMAGE SENSOR, CAPABLE OF PREVENTING THE DEVIATION BETWEEN COLOR FILTERS, AND THE COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR IMAGE SENSOR MANUFACTURED BY THE SAME

摘要

PURPOSE: A method for manufacturing a complementary metal-oxide semiconductor image sensor(CIS) and the CIS manufactured by the same are provided to simplify a manufacturing process by forming a micro lens with a polymer material which functions as a color filter.;CONSTITUTION: An insulating layer(110) is formed on a semiconductor substrate(100). A protective layer(120) is formed to protect the insulating layer. A color filter is formed with a polymer material. The color filter is annealed to form a micro lens(140). The micro lens includes a red color micro lens(141), a green color micro lens(142), and a blue color micro lens(143).;COPYRIGHT KIPO 2010