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Stress-Enhanced Mobility in MOSFETs Fabricated in Zone-Melting-Recrystallized Poly-Si Films

机译：在区域熔化 - 再结晶的多晶硅薄膜中制造的mOsFET中应力增强的迁移率

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Tsaur, B. Y.; Fan, J. C.; Geis, M. W.; Silversmith, D. J.; Mountain, R. W.;
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年度 1981
页码 p.1-5
总页数 5
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Field effect transistors; Metal oxide semiconductors; Recrystallization; Zone melting; Polysilicons; Films; Reprints;

机译：场效应晶体管;金属氧化物半导体;重结晶;区域熔化;多晶硅;薄膜;重印;

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1. High-Mobility MOSFETs Fabricated on Continuous, Wafer-Scale Ge Films Epitaxially Grown on Si [J] . Ghosh S., Han S.M. Electron Device Letters, IEEE . 2014,第9期

机译：在Si上外延生长的连续晶圆级Ge膜上制造的高迁移率MOSFET
2. The metal-induced crystallization of poly-Si and the mobility enhancement of thin film transistors fabricated on a glass substrate [J] . Thanh Nga Nguyen, Van Duy Nguyen, Sungwook Jung, Microelectronic Engineering . 2010,第11期

机译：金属诱导的多晶硅结晶和在玻璃基板上制造的薄膜晶体管的迁移率增强
3. High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method [J] . Shimizu K., Sugiura O. IEEE Transactions on Electron Devices . 1993,第1期

机译：通过新型准分子激光结晶方法制造的高迁移率多晶硅薄膜晶体管
4. Stress-enhanced mobility in MOSFETs fabricated in zone-melting-recrystallized poly-Si films [C] . Tsaur B.-Y., Fan J.C.C., Geis M.W., Electron Devices Meeting, 1981 International . -1

机译：在区域熔化再结晶的多晶硅膜中制造的MOSFET中应力增强的迁移率
5. Non-Prestonian RRs of poly-Si and SiO2 Films and Effect of Residual Stress on RRs of Various Types of SiO2 and Si 3N4 Films. [D] . Korkmaz, Sevim. 2017

机译：多晶硅和SiO2薄膜的非Prestonian RRs和残余应力对各种类型的SiO2和Si 3N4薄膜的RRs的影响。
6. Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility [O] . Lulu Chou, Yan Liu, Yang Xu, 2021

机译：GE N沟道MOSFET具有ZrO2电介质实现改进的移动性
7. High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1°) Off-Angle [O] . Kenji Fukuda, Makoto Kato, Shinsuke Harada, 2016

机译：具有邻近（1°）偏角的C（000-1）外延衬底上制作的4H-siC mOsFET的高反型沟道迁移率
8. Stress-Enhanced Mobility in MOSFETs Fabricated in Zone-Melting-Recrystallized Poly-Si Films. [R] . Tsaur, B. Y., Fan, J. C., Geis, M. W., 1981

机译：在区域熔化 - 再结晶的多晶硅薄膜中制造的mOsFET中应力增强的迁移率。

Stress-Enhanced Mobility in MOSFETs Fabricated in Zone-Melting-Recrystallized Poly-Si Films

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