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High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1°) Off-Angle

机译：具有邻近（1°）偏角的C（000-1）外延衬底上制作的4H-siC mOsFET的高反型沟道迁移率

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Kenji Fukuda; Makoto Kato; Shinsuke Harada; Kazutoshi Kojima;
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1. Conversion of basal plane dislocations to threading edge dislocations in growth of epitaxial layers on 4H-SiC substrates with a vicinal off-angle [J] . Keiko Masumoto, Sachiko Ito, Hideto Goto, Materials science forum . 2014,第pta1期

机译：4H-SiC衬底上具有邻角倾斜的外延层生长过程中基面位错向螺纹边缘位错的转换
2. Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultra low net doping concentrations [J] . Sometani Mitsuru, Hosoi Takuji, Hirai Hirohisa, Applied Physics Letters . 2019,第13期

机译：具有超低净掺杂浓度的4H-SiC（0001）MOSFET的反向沟道中的理想声子散射限制迁移率
3. Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide [J] . Okamoto D., Yano H., Hirata K., Electron Device Letters, IEEE . 2010,第7期

机译：利用磷掺杂的栅氧化物改善Si面上4H-SiC MOSFET的反向沟道迁移率
4. High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1 °) Off-Angle [C] . Kenji Fukuda, Makoto Kato, Shinsuke Harada, International Conference on Silicon Carbide and Related Materials; 20050918-23; Pittsburgh,PA(US) . 2006

机译：C（000-1）外延衬底（倾斜角小于1°）上制造的4H-SiC MOSFET的高反向沟道迁移率
5. 4H-SiC Trench-Gate MOSFET: Practical Surface-Channel Mobility Extraction [D] . Harmon, Jeffrey Lee. 2019

机译：4H-SIC沟槽MOSFET：实用的表面沟道迁移率提取
6. High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen [O] . E. Pallecchi, F. Lafont, V. Cavaliere, -1

机译：氢气下生长后退火在4H-SiC（0001）上外延石墨烯中的高电子迁移率
7. Enhancement of inversion channel mobility in 4H-SiC MOSFETs using a gate oxide grown in nitrous oxide (N2O) [O] . G. Gudjónsson, H. Ö. Ólafsson, E. Ö. Sveinbjörnsson 2015

机译：使用氧化亚氮（N2O）中生长的栅极氧化物增强4H-siC mOsFET中的反转沟道迁移率

High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1°) Off-Angle

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