High-mobility poly-Si thin-film transistors fabricated by a novel excimer laser crystallization method

摘要

High-mobility poly-Si thin-film transistors (TFTs) were fabricated by a novel excimer laser crystallization method based on dual-beam irradiation. The new method can reduce the solidification velocity of the top Si layer by heating the bottom Si layer of the Si/SiO/sub 2//Si/glass substrate structure by means of laser irradiation not only from the front side but also from the back side. The grain size of poly-Si film was enlarged up to 2 mu m. The field-effect mobilities of the TFT exceeded 380 cm/sup 2//V-s for electrons and 100 cm/sup 2//V-s for holes.