Picosecond Optoelectronic Measurement of the High Frequency Scattering Parameters of a GaAs FET (Field Effect Transistor)

摘要

In this report, we present picosecond optoelectronic measurements of the pulse response of an unpackaged GaAs field effect transistor (FET). The data are transformed to the frequency domain to extract scattering parameters with >60 GHz bandwidth. Because of the large bandwidth available and simple de-embedding procedures, this is a very promising technique for characterization of devices operating in the millimeter-wave region.