INTEGRATING A GATE-ALL-AROUND (GAA) FIELD-EFFECT TRANSISTOR(S) (FET(S)) AND A FINFET(S) IN A COMMON SUBSTRATE OF A SEMICONDUCTOR DIE

摘要

Integrating at least one gate-all-around (GAA) field-effect transistor and at least one FinFET on a common substrate of a semiconductor die is disclosed. GAA FETs and FinFETs are integrated on a common substrate to optimize advantages of each type of FET. For example, FinFETs may be formed in the common substrate in the semiconductor die for forming circuits where reduced resistance and capacitance are important for performance, whereas GAA FETs may be formed in the common substrate in the semiconductor die for forming circuits with decreased threshold voltage to allow voltage scaling to lower supply voltages to reduce power consumption and also to reduce silicon area as a result of vertically stacked devices. This supports a designer having the freedom to separate control the channel width of the GAA FETs and FinFETs, which may be important for controlling drive strength and/or area for different circuits.