HORIZONTAL GATE-ALL-AROUND (GAA) FIELD EFFECT TRANSISTOR (FET) FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) INTEGRATION

摘要

A horizontal gate-all-around (GAA) field effect transistor (FET) is described. The horizontal GAA FET includes a substrate as well as a shallow trench isolation (STI) region on the substrate. The horizontal GAA FET includes a first nano-sheet structure on the substrate and extending through the STI region. The first nano-sheet structure includes a first drain/source region stacked on a first source/drain region. The first nano-sheet structure also includes a first channel region between the first drain/source region and the first source/drain region. The horizontal GAA FET also includes a first gate on the STI region and horizontally surrounding the first channel region on four sides.