Influence of substrate and doping profile parameters on characteristics of ion-implanted GaAs Schottky-barrier field-effect transistor (MESFET)

机译：衬底和掺杂轮廓参数对离子注入GaAs肖特基势垒场效应晶体管（MESFET）特性的影响

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Ion-implanted GaAs MESFET was modeled and dependences of MESFET characteristics on doping profile parameters were found. These dependences allow to optimize transistor for different applications (power, high frequency or low-noise transistors).

机译：对离子注入GaAs MESFET进行了建模，发现了MESFET特性对掺杂轮廓参数的依赖性。这些依赖性允许针对不同的应用（功率，高频或低噪声晶体管）优化晶体管。

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《2010 IEEE 2nd Russia School and Seminar on Fundamental Problems of Micro/Nanosystems Technologies》|2010年|p.33-36|共4页
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中图分类特种结构材料;
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MESFET; TCAD; modeling;

机译：MESFET; TCAD;建模;

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专利

1. The influence of a doping profile on the characteristics of an ion-implanted GaAs field-effect transistor with a Schottky barrier [J] . Shestakov A.K., Zhuravlev K.S. Semiconductors . 2011,第12期

机译：掺杂分布对具有肖特基势垒的离子注入GaAs场效应晶体管特性的影响
2. Numerical Modeling of GaAs Field-Effect Transistor Characteristics as Functions of Channel Doping Profile Parameters [J] . A. K. Shestakov, K. S. Zhuravlev Optoelectronics, Instrumentation and Data Processing . 2012,第1期

机译：GaAs场效应晶体管特性作为沟道掺杂分布参数函数的数值建模
3. The influence of ion-implanted profiles on the performance of GaAs MESFET's and MMIC amplifiers [J] . Pavlidis D., Cazaux J.-L. IEEE Transactions on Microwave Theory and Techniques . 1988,第4期

机译：离子注入轮廓对GaAs MESFET和MMIC放大器性能的影响
4. Influence of substrate and doping profile parameters on characteristics of ion-implanted GaAs Schottky-barrier field-effect transistor (MESFET) [C] . {missing} IEEE Russia School and Seminar on Fundamental Problems of Micro/Nanosystems Technologies . 2010

机译：基板和掺杂谱参数对离子注入的GaAs肖特基屏障场效应晶体管（MESFET）特性的影响
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors [O] . Junseok Seo, Kyungjune Cho, Woocheol Lee, 2019

机译：容易的p掺杂对双极WSe2场效应晶体管的电和光电特性的影响
7. Hot-carrier-induced radiation emission in AlGaAs/GaAs high electron mobility transistors and GaAs MESFETs [O] . Zanoni Enrico, Bigliardi Stefano, Capelletti Rosanna, 1990

机译：AlGaAs / GaAs高电子迁移率晶体管和GaAs MESFET中热载流子引起的辐射发射
8. Characterization of Enhanced Schottky-Barrier InGaAs/Al(x)Ga(1-X)As Strained Channel Modulation-Doped Field-Effect Transistors [R] . Lott, J. A. 1987

机译：增强肖特基势垒InGaas / al（x）Ga（1-X）作为应变通道调制掺杂场效应晶体管的表征

Influence of substrate and doping profile parameters on characteristics of ion-implanted GaAs Schottky-barrier field-effect transistor (MESFET)

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