Planar ion-implanted GaAs MESFETS with improved open-channel burnout characteristics
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机译:平面离子注入GaAs MESFET具有改善的明渠烧毁特性
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摘要
An improved substantially planar and easy to manufacture field- effect- transistor (FET) includes a guard region between an n.sup.+ drain region and the remainder of the device, which enables the breakdown voltage of the FET to be substantially increased under open-channel conditions without adversely impacting other important device characteristics.
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