PLANAR ION IMPLANTED GAAS MESFET HAVING IMPROVED OPEN CHANNEL BURNOUT CHARACTERISTICS

摘要

PURPOSE: To fabricate a planar MESFET excellent in open channel burnout characteristics while keeping the advantages of fabrication of planar device. ;CONSTITUTION: The planar MESFET comprises a source region 24, a drain region 19 and a channel region 22 formed on a substrate 29 and a protective region 18 is provided closely to the drain region. The protective region 18 functions to increase the breakdown voltage of a field effect transistor under open channel state.;COPYRIGHT: (C)1996,JPO