Two-dimensional C-V model of AlGaAs/GaAs modulation doped field effect transistor (MODFET) for high frequency applications

摘要

This paper reports a detailed two-dimensional (2-D) analytical capacitance-voltage (C-V) model for a modulation-doped field effect transistor. The contribution of various capacitances on the performance of the device is shown. The analysis includes the effect of design parameters on cutoff frequency, and the peak cutoff frequency obtained is 190 GHz. The excellent agreement with the simulated and experimental data proves the validity and applicability of the model to optimize the device at high frequencies.