MANUFACTURE OF CARBON DOPED P-TYPE EPITAXIAL ALGAAS LAYER AND HETEROJUNCTION BIPOLAR TRANSISTOR WITH SAME AS BASE LAYER

摘要

PURPOSE: To obtain a constant C concentration by using an Al compound for an Al source of a C doped p-type epitaxial Al epitaxial AlGaAs layer where Al and C are not joined with each other in the compound. ;CONSTITUTION: When manufacturing a C doped p type epitaxial layer based on a metal organic chemical vapor deposition (MOCVD) process, an Al compound where Al is not directly joined with C is used for an Al source. For such Al compounds, there are cited trimethyl amine alane (H₃AlN (CH₃) ₃) and dimethyl amine alane (H₃AlN (CH₃) ₂C₂H₅) and the like for example. Since these compounds with amine and alane are thermal decomposed with ease, they are thermally decomposed in an MOCVD device and alane (AlH₃) is generated when they are supplied to the device as the Al source. This alane functions as the Al source in the MOCVD process. This construction makes it possible to form a p-type Al_xGa_1-xAs layer having a constant concentration, and an Al composition inclination.;COPYRIGHT: (C)1993,JPO&Japio