Modeling of transverse propagation delays in the GaAs/AlGaAs modulation doped heterojunction field effect transistors

摘要

A computer-efficient algorithm to calculate the transverse propagation delays in a GaAs/AlGaAs modulation-doped FET (MODFET) is discussed. The model includes the intrinsic as well as the extrinsic parameters of the MODFET. The dependences of these delays on the various MODFET parameters such as its gate length and width and the gate metal resistivity have been studied.