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Simulation of the effect of emitter doping on the delay time in AlGaAs/GaAs heterojunction bipolar transistors

机译：发射极掺杂对alGaas / Gaas异质结双极晶体管延迟时间影响的模拟

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Kusano C.; Mizuta Hiroshi; Mochizuki K.; Yamaguchi K.;
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年度 1992
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专利

1. AlGaAs/GaAs pnp heterojunction bipolar transistor with carbon-doped collector and emitter grown by atomic layer epitaxy [J] . Henderson T., Bayraktaroglu B. Electronics Letters . 1991,第9期

机译：原子层外延生长碳掺杂集电极和发射极的AlGaAs / GaAs pnp异质结双极晶体管
2. Submicron scaling of AlGaAs/GaAs self-aligned thin emitter heterojunction bipolar transistors (SATE-HBT) with current gain independent of emitter area [J] . Malik R.J., Lunardi L.M. Electronics Letters . 1989,第17期

机译：AlGaAs / GaAs自对准薄发射极异质结双极晶体管（SATE-HBT）的亚微米缩放，电流增益与发射极面积无关
3. Monolithic optoelectronic switch based on the integration of a GaAs/AlGaAs heterojunction bipolar transistor and a GaAs vertical-cavity surface-emitting laser [J] . Zhou P., Cheng J. IEEE Photonics Technology Letters . 1993,第9期

机译：基于GaAs / AlGaAs异质结双极晶体管和GaAs垂直腔面发射激光器的集成的单片光电开关
4. Effect of carrier recombination at the emitter-base heterojunction on the performance of GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar transistors [C] . Z.H. Lu, A. Majerfeld, L.W. Yang, International symposium on compound semiconductors . 1995

机译：发射极-基极异质结处载流子复合对GaInP / GaAs和AlGaAs / GaAs异质结双极晶体管性能的影响
5. Analysis and modeling of physical mechanisms contributing to the AlGaAs/GaAs heterojunction bipolar transistor reliability. [D] . Sheu, Shyh-Horng. 1997

机译：分析和建模有助于AlGaAs / GaAs异质结双极晶体管可靠性的物理机制。
6. Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions [O] . Yao Wu, Xin Yan, Wei Wei, 2018

机译：AlGaAs / GaAs异质结优化GaAs纳米线pin结阵列太阳能电池
7. Simulation of the Effect of Emitter Doping on the Delay Time in AlGaAs/GaAs Heterojunction Bipolar Transistors [O] . Chushiro Kusano, Hiroshi Masuda, Kazuhiro Mochizuki, 1992

机译：仿真发射极掺杂对AlgaAs / GaAs异质结双极晶体管延迟时间的影响
8. Influence of Pseudomorphic Base-Emitter Spacer Layers on Current-InducedDegradation of Beryllium-Doped InGaAs/InAlAs Heterojunction Bipolar Transistors [R] . Zhang, K., Zhang, X., Bhattacharya, P., 1996

机译：假晶基极 - 发射极间隔层对铍掺杂InGaas / Inalas异质结双极晶体管电流诱导退化的影响

Simulation of the effect of emitter doping on the delay time in AlGaAs/GaAs heterojunction bipolar transistors

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