Titanium-Doped Semi-Insulating InP Grown by the Liquid Encapsulated Czochralski Method

摘要

Semi-insulating crystals of InP with resistivities of 1-3 X 10 to the 6th power ohm cm have been grown by the liquid encapsulated Czochralski method from melts co-doped with Ti, a deep donor located 0.62 + or - 0.02 eV below the conduction band, and either Zn, Cd, or Be. This technique should make it possible to obtain crystals with resistivities of 10 to the 7th power to 10 to the 8th power ohm cm, which would be of interest for integrated circuit applications if their thermal stability were found to exceed that of Fe-doped semi-insulating InP. (Author)