Photo-Induced Transient Spectroscopy PITS Study on Undoped LEC (Liquid Encapsulated Czochralski) Grown Semi-Insulating GaAs

摘要

Semi-insulating LEC GaAs has been studied with above bandgap (1.96 eV) illumination by photo-induced transient spectroscopy (PITS) and also by thermally stimulated current. Electron and hole traps are identified. The photocurrent variation with time and the photocurrent enhancement with temperature have been studied and an activation energy of 0.077 eV observed. The possible bistable or metastable action of defects including recombination center and traps are discussed. Liquid encapsulated Czochralski. Reprints. (jhd)