METHOD FOR IMPROVING THERMAL ENVIRONMENT DURING HIGH QUALITY COMPOUND SEMICONDUCTOR SINGLE CRYSTAL GROWTH BY LEC(LIQUID-ENCAPSULATED CZOCHRALSKI) METHOD

摘要

A single crystal growing method is provided to keep stably a thermal flow without variation under a crystal growing process by stabilizing the gradient of temperature toward a growth axis direction using a ring type shielding structure. A thermal flow is uniformly formed in a growth direction by applying a new heat shielding structure to a conventional heat controlling structure. The new heat shielding structure is composed of a double type structure instead of a single type structure. The double type structure includes an inner ring shielding part(30) and an outer ring shielding part(31). One selected from a group consisting of GaAs, InP, GaP and GaInAs compound semiconductor single crystal is capable of being grown by using the new heat shielding structure.