Linewidth Control with Masked Ion Beam Lithography Using Stencil Masks

摘要

Masked ion beam lithography (MIBL) is capable of high resoluton (< 50 nm) proximity printing with short exposure times (< 1 s). In this letter we demonstrate the large process latitude and precise linewidth control possible with MIBL when stencil masks are employed. Features, 0.65 micrometers in dimension, exposed in polymethylmethacrylate (PMMA) show negligible linewidth variation (< 50 nm) for a change in dose of over an order of magnitude. This linewidth control is a result of the high contrast of stencil masks, the low divergence of the ion beam, lack of diffraction, and small proximity effect of this technology. The linewidth control of MIBL is compared to the linewidth control of optical projection lithography and x ray lithography. Keywords: Reprints; Stencil masks; Masked ion beam lithography.