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Masked Ion Beam Lithography Using Stencil Masks.

机译:使用模板掩模的掩模离子束光刻。

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摘要

Masked ion beam lithography has the potential to become a high resolution proximity printing technique which is capable of short exposure times. When used for proximity printing, the resolution of masked ion beam lithography is limited by the interaction of the transmitted ions with the ion beam mask.

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