Femtosecond Carrier Dynamics in Semiconductors and Metals

摘要

We describe investigations of carrier dynamics in Gallium Arsenide and Aluminum Gallium Arsenide semiconductors and thin gold films using femtosecond optical techniques. Transient absorption saturation measurements in semiconductors permit an investigation of the fundamental scattering processes of optically excited carriers. Measurements of energy relaxation provide evidence for transient nonthermal carrier distributions. Studies in metals allow an investigation of nonequilibrium electron and phonon effects since the electrons are decoupled from the lattice on a femtosecond time scale. Nonequilibrium temperatures and energy transport in the electron gas have been observed. Reprints. (aw)