Femtosecond Studies of Carrier Dynamics in Compound Semiconductors

摘要

The objective of our program is to develop and combine state of the artfemtosecond measurement techniques with advanced solid state theoretical techniques to study carrier dynamics in semiconductors. This program is a collaborative effort between investigators at the Massachusetts Institute of Technology and the University of Florida. Experimental efforts at MIT focus on the development and application of new femtosecond techniques for measuring ultrafast processes in compound semiconductors and devices. Studies include investigation of both nonlinear index and absorption and gain dynamics in bulk semiconductors and devices. The work at the University of Florida focuses on developing new approaches for studying ultrafast carrier dynamics of carriers in semiconductors and predicting transient behavior as it impacts on device performance. Investigations use full band structure calculation combined with techniques for numerically solving the Boltzmann and quantum transport equations for both electron and hole distributions.