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Power semiconductor module, has metal foil with section connected with carrier and connecting section spaced from carrier, where metal foil is electrical-conductively connected with another metal foil at connecting section
Power semiconductor module, has metal foil with section connected with carrier and connecting section spaced from carrier, where metal foil is electrical-conductively connected with another metal foil at connecting section
The module has a metal foil (10) with a section (11) rigidly connected with an insulation carrier (19) of a circuit carrier (1) and a connecting section (12) spaced from the insulation carrier. Another metal foil (20) exhibits a section (21) rigidly connected with an insulation carrier (29) of another circuit carrier (2). The former metal foil is electrical-conductively connected with the latter metal foil at the connecting section. The former insulation carrier and/or the latter insulation carrier are formed as ceramic panels. The circuit carriers are designed as direct copper bonding- substrates or active metal brazing-substrates. An independent claim is also included for a method for manufacturing a power semiconductor module.
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