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Firing Performance of Microchip Exploding Foil Initiator Triggered by Metal-Oxide-Semiconductor Controlled Thyristor

机译:金属氧化物半导体控制晶闸管触发的Microchip爆炸箔引发剂的点火性能

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摘要

In this paper, microchip exploding foil initiators were fabricated by micro-electro-mechanical system scale fabrication methods, such as magnetron sputtering, photolithography, and chemical vapor deposition. A small-scale capacitor discharge unit based on the metal-oxide-semiconductor controlled thyristor was designed and produced to study the performance of the microchip exploding foil initiator. The discharge performance of the capacitor discharge unit without load and the effect of protection devices on the metal-oxide-semiconductor controlled thyristor were studied by the short-circuit discharge test. Then, the electric explosion characteristic of the microchip exploding foil initiator was also conducted to study the circuit current, peak power, deposited energy, and other parameters. Hexanitrostilbene refined by ball-milling and microfluidic technology was adopted to verify the initiation capability of the microchip exploding foil initiator triggered by the metal-oxide-semiconductor controlled thyristor. The results showed that the average inductance and resistance of the capacitor discharge circuit were 22.07 nH and 72.55 mΩ, respectively. The circuit peak current reached 1.96 kA with a rise time of 143.96 ns at 1200 V/0.22 μF. Hexanitrostilbene fabricated by ball-milling and microfluidic technology was successfully initiated at 1200 V/0.22 μF and 1100 V/0.22 μF, respectively.
机译:本文通过磁控溅射,光刻和化学气相沉积等微机电系统规模的制备方法制备了微芯片爆炸箔引发剂。设计并生产了一种基于金属氧化物半导体控制晶闸管的小型电容器放电装置,以研究微芯片爆炸箔引发剂的性能。通过短路放电试验研究了电容器电容器无负载放电单元的放电性能以及保护器件对金属氧化物半导体控制晶闸管的影响。然后,还对微芯片爆炸箔引发器的电爆炸特性进行了研究,以研究电路电流,峰值功率,沉积能量和其他参数。采用球磨和微流控技术精制的六硝基二苯乙烯,验证了由金属氧化物半导体控制的晶闸管触发的微芯片爆炸箔引发剂的引发能力。结果表明,电容器放电电路的平均电感和电阻分别为22.07 nH和72.55mΩ。在1200 V / 0.22μF时,电路峰值电流达到1.96 kA,上升时间为143.96 ns。通过球磨和微流体技术制造的六硝基二苯乙烯分别在1200 V / 0.22μF和1100 V / 0.22μF的温度下成功启动。

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