Electron Velocity Overshoot at Room and Liquid Nitrogen Temperatures in Silicon Inversion Layers

摘要

Effective electron velocities in silicon Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) exceeding the bulk saturation values of 10 to the 7th power cm/s at room temperature and 1.3 x 10 to the 7th power cm/s at liquid nitrogen temperature are inferred for the first time. This conclusion suggests that electron velocity overshoot occurs over a large portion of the device channel length. To infer this phenomenon, submicrometer channel length Si MOSFET's with lightly doped channel region were fabricated. These devices have low field mobility of 450 sq cm V.s and showed only slight short-channel effects. Effective carrier velocities are calculated from the saturated transconductance, Keywords: Relaxation time; Capacitance; Steady state; Reprints. (jes)