首页>
外国专利>
Method for improving luminescence and electrical properties in semiconductor materials by electron irradiation at liquid nitrogen temperatures
Method for improving luminescence and electrical properties in semiconductor materials by electron irradiation at liquid nitrogen temperatures
展开▼
机译:在液氮温度下通过电子辐照改善半导体材料的发光和电性能的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Luminescent materials are formed by annealing a luminescence sample with a high energy electron beam at temperatures near the vicinity of liquid nitrogen temperatures.
展开▼