As MOS transistor dimensions shrink to deep sub-micron regime, the non-local effects are expected to become more prominent. Perhaps the most important of these non-local effects is velocity overshoot, which can be beneficial to device performance by improving current drive and transconductance. Here, for the first time, we report direct observation of velocity overshoot using a special test structure. The first indication of velocity overshoot is seen at channel length of 0.22 /spl mu/m, while at L/sub eff/=0.12 /spl mu/m drift velocity values up to 40% higher than the long channel value are measured. The SOI NMOSFETs used in the study are built on SIMOX wafers with channel lengths from 0.12 /spl mu/m to 0.6 /spl mu/m.
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机译：由于MOS晶体管尺寸缩小到深层亚微米制度，预计非局部效果将变得更加突出。也许这些非局部效果中最重要的是速度过冲，这可以通过改善电流驱动和跨导的设备性能。在此，我们首次报告使用特殊测试结构直接观察速度过冲。在频道长度为0.22 / spl mu / m处看到速度过冲的第一指示，而在L / sup eff / = 0.12 / spl mu / m漂移速度值高达40％高于长通道值的漂移速度值。该研究中使用的SOI NMOSFET在SIMOX晶片上构建，频道长度为0.12 / SPL MU / M至0.6 / SPL MU / m。
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