Single crystal germanium layer formation on single crystal silicon substrate, especially silicon wafer for microelectronics, by CVD at specified initial low and subsequent high temperatures

摘要

Single crystal germanium layer formation on a single crystal silicon substrate comprises chemical vapor deposition (CVD) at specified initial low and subsequent high temperatures. A single crystal germanium layer is formed on a single crystal silicon substrate by germanium CVD initially at 400-500 deg C (T1) and subsequently at 750-850 deg C (T2) until the desired thickness is achieved. Preferred Features: The process may be followed by CVD of a Si1-xGex alloy (where x is greater than or equal 0.9) at 500-600 deg C and then germanium CVD initially at 500-600 deg C and subsequently at 750-850 deg C. Germanium CVD is carried out at atmospheric pressure.