Short-Channel Effect in Fully Depleted SOI (Silicon-On-Insulator) MOSFET's

摘要

The short-channel effect in fully depleted silicon-on-insulator MOSFET's has been studied by a two-dimensional analytical model and by computer simulation. The vertical field through the depleted film strongly influences the lateral field across the source and drain regions. The short-channel effect can be significantly reduced by decreasing the silicon film thickness. Reprints. (rh)