首页> 外文会议> >Analytical Modeling of Short-Channel Multi-Gate SOI MOSFETs with Special Emphasis on the Partially-Depleted and Fully-Depleted Surrounding Gate Transistor

【24h】

Analytical Modeling of Short-Channel Multi-Gate SOI MOSFETs with Special Emphasis on the Partially-Depleted and Fully-Depleted Surrounding Gate Transistor

机译：在部分耗尽和完全耗尽的环绕栅晶体管上特别强调的短通道多栅极SOI MOSFET的分析模型

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

not avaliable

机译：无法使用

著录项

来源
《》|2005年|P.97-98|共2页
会议地点
作者
Pesic; I.; Nakamura; H.; Haneda; H.; Yamazaki; H.; Sakuraba; H.; Masuoka; F.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类工业技术;
关键词

相似文献

外文文献
中文文献
专利

1. Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs [J] . Sang-Hyun Oh, Monroe D. IEEE Electron Device Letters . 2000,第9期

机译：完全耗尽的双栅极和圆柱形环绕栅极MOSFET中的短沟道效应的解析描述
2. Analytical subthreshold current and subthreshold swing models of short-channel dual-metal-gate (DMG) fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs [J] . Gopi Krishna Saramekala, Abirmoya Santra, Mirgender Kumar, Journal of Computational Electronics . 2014,第2期

机译：短沟道双金属栅（DMG）全耗尽型凹源极/漏极（Re-S / D）SOI MOSFET的分析亚阈值电流和亚阈值摆幅模型
3. Explicit continuous charge-based compact model of surrounding gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation [J] . Hamzah Afiq, Alias N. Ezaila, Tan Michael Loong Peng, Semiconductor science and technology . 2020,第4期

机译：围绕栅极MOSFET（SRGMOSFET）的基于连续电荷的显式紧凑模型，可在部分耗尽到完全耗尽之间平滑过渡
4. Analytical Modeling of Short-Channel Multi-Gate SOI MOSFETs with Special Emphasis on the Partially-Depleted and Fully-Depleted Surrounding Gate Transistor [C] . Pesic I., Nakamura H., Haneda H., International Semiconductor Device Research Symposium . 2005

机译：短通道多栅极SOI MOSFET的分析模型，特别强调围绕围栅晶体管部分耗尽和全耗尽
5. Analytical modeling of the Partially-Depleted Silicon-On-Insulator MOSFET [D] . Hammad, Mohamed Youssef. 1999

机译：部分耗尽的绝缘体上的分析模型 - 绝缘体MOSFET
6. Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor [O] . Chankeun Yoon, Seungjun Moon, Changhwan Shin -1

机译：FinFET和带铁电电容器的全耗尽绝缘体上硅（FDSOI）MOSFET的磁滞窗口研究
7. Modeling of Sub Threshold Current and Sub Threshold Swing of Short-Channel Fully-Depleted SOI MOSFET with Back-Gate Control [O] . Sarvesh Dubey, Rahul Mishra 2017

机译：副通道全耗尽SOI MOSFET的子阈值电流建模与后栅极控制

Analytical Modeling of Short-Channel Multi-Gate SOI MOSFETs with Special Emphasis on the Partially-Depleted and Fully-Depleted Surrounding Gate Transistor

摘要

著录项

相似文献

相关主题

期刊订阅