InGaAs/GaInAsP/GaInP Strained-Layer Quantum Well Separate-ConfinementHeterostructures Grown by OMVPE. (Reannouncement with New Availability Information)

摘要

Quaternary confinement layers in InGaAs strained-layer quantum well structuresbased on GaInAsP/GaAs materials have led to devices of very high differential efficiencies. Growth of these structures by OMVPE is described. A thin layer of GaAs inserted between the InGaAs and the upper GaInAsP confinement layer has a very beneficial effect on the structural quality of the top cladding layer and on the device performance. It is conjectured that the thin GaAs serves as a template to maintain the in-plane lattice constant of the structure....Strained-layer diode lasers, Diode lasers at 980 N.M.