Non-Volatile, Rad-Hard Random Access Memory (RAM) on GaAs

摘要

This short discussion summarizes the preliminary test results obtained with thefirst round of Sierra Monolithics RAM cells fabricated on GaAs by Honeywell. The RAM cell consists of a Hall effect sensor in the form of a 20 micron N-implanted square with ohmic connections at the four corners and a drive coil with four turns surrounding the Hall sensor. The basic program plan was to evaluate the characteristics of the RAM cell and then implement the appropriate read and write supporting circuits around it to make a full memory element. Thus in the first round of fabrication no supporting circuitry was fabricated with the basic cell.