机译:基于6T2C的铁电非易失性静态随机存取存储器的单事件效果模拟
Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China|Tianjin Polytech Univ Sch Elect & Informat Engn Tianjin 300387 Peoples R China;
Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China|Inst Microelect Tianjin Binhai New Area Tianjin 300450 Peoples R China;
Beijing Relitech Co Ltd Beijing 100015 Peoples R China;
Tianjin Polytech Univ Sch Elect & Informat Engn Tianjin 300387 Peoples R China;
Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China|Univ Calcutta Dept Phys Kolkata 712201 W Bengal India;
single event effects; non-volatile static random access memory; Hf-05; Zr-05; O-2; ferroelectric capacitor; linear energy transfer; remnant polarization; coercive voltage;
机译:静态随机存取存储器中快速中子诱发的单事件扰动的评估和蒙特卡罗N粒子代码(MCNPX)的仿真
机译:质子辐照下总电离剂量对静态随机存取记忆中单事件翻转敏感性的协同作用
机译:使用多层感知器的非易失性随机存取存储器铁电材料的高通量筛选
机译:反铁电ZRO_2:低功耗非易失性1T-1C和1T随机接入存储器的推动器
机译:静态随机存取存储器中多个细胞不适的模式识别:实验测试结果与单事件不适机制的相关性。
机译:整体式3D逻辑电路和静态随机存取存储器的电耦合和仿真
机译:基于铁电容器的非易失性SRAM设计的单事件效应模拟
机译:sEU(单事件翻转)容忍存储器单元源自sRam中的sEU机制的基础研究(静态随机存取存储器)